JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Transistors
MMBT3904M
SOT-723
TRANSISTOR (NPN)
FEATURE
Complementary to MMBT3906M
Small Package
MARKING: 1N
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.2
A
PC
Power Dissipation
0.1
W
Thermal Resistance from Junction to Ambient
1250
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
6
V
Collector cut-off current
ICEX
VCE=30V,VEB(off)=3V
50
nA
Emitter cut-off current
IEBO
VEB=5V,IC=0
100
nA
hFE(1)
VCE=1V,IC=0.1mA
40
hFE(2)
VCE=1V,IC=1mA
70
hFE(3)
VCE=1V,IC=10mA
100
60
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
hFE(4)
VCE=1V,IC=50mA
VCE(sat)1
IC=10mA,IB=1mA
0.2
V
VCE(sat)2
IC=50mA,IB=5mA
0.3
V
VBE(sat)1
IC=10mA,IB=1mA
0.85
V
VBE(sat)2
IC=50mA,IB=5mA
0.95
V
fT
VCE=20V,IC=10mA,f=100MHz
Output capacitance
Cob
VCB=5V,IE=0,f=1MHz
Input capacitance
Cib
Noise figure
NF
Delay time
td
Rise time
tr
Storage time
ts
Fall time
tf
www.cj-elec.com
300
0.65
MHz
300
VEB=0.5V,IC=0,f=1MHz
4
8
pF
VCE=5V,IC=0.1mA,f=1MHz,RS=1kΩ
5
dB
VCC=3V,VBE(off)=-0.5V,
IC=10mA,IB1=1mA
35
ns
35
ns
VCC=3V,IC=10mA
IB1=IB2=1mA
200
ns
50
ns
1
pF
D,Aug,2015
Typical Characteristics
Static Characteristic
hFE
DC CURRENT GAIN
COLLECTOR CURRENT
350uA
300uA
250uA
200uA
40
——
IC
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
400uA
60
hFE
400
500uA
450uA
80
IC
(mA)
100
150uA
Ta=100℃
300
Ta=25℃
200
100
100uA
20
IB=50uA
0
0.1
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
1
0.3
IC
VBEsat
1.2
30
10
3
COLLECTOR CURRENT
(V)
IC
100
(mA)
IC
——
300
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
600
VCE
20
Ta=100℃
100
Ta=25℃
30
Ta=25℃
0.8
Ta=100℃
0.4
β=10
β=10
10
0.0
1
10
3
IC
100
100
30
COLLECTOR CURRENT
IC
200
1
10
3
(mA)
100
30
COLLECTOR CURRENT
—— VBE
Cob/ Cib
9
——
IC
VCB/ VEB
f=1MHz
IE=0/IC=0
Ta=25℃
30
Cib
(pF)
Ta=100℃
C
10
CAPACITANCE
IC
(mA)
COMMON EMITTER
VCE=1V
COLLECTOR CURRENT
300
(mA)
3
Ta=25℃
1
3
Cob
0.3
0.1
0.2
0.4
0.6
0.8
1.0
1
0.1
1.2
fT
—— IC
PC
200
10
3
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
300
1
0.3
——
V
20
(V)
Ta
VCE=20V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
200
100
150
100
50
0
1
3
10
COLLECTOR CURRENT
www.cj-elec.com
30
IC
0
60
(mA)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
D,Aug,2015
SOT-723 Package Outline Dimensions
Symbol
A
A1
b
b1
c
D
E
E1
e
θ
Dimensions In Millimeters
Min.
Max.
0.430
0.500
0.000
0.050
0.170
0.270
0.270
0.370
0.080
0.150
1.150
1.250
1.150
1.250
0.750
0.850
0.800TYP.
7° REF.
Dimensions In Inches
Min.
Max.
0.017
0.020
0.000
0.002
0.007
0.011
0.011
0.015
0.003
0.006
0.045
0.049
0.045
0.049
0.030
0.033
0.031TYP.
7° REF.
SOT-723 Suggested Pad Layout
www.cj-elec.com
3
D,Aug,2015
SOT-723 Tape and Reel
www.cj-elec.com
4
D,Aug,2015
很抱歉,暂时无法提供与“MMBT3904M 1N”相匹配的价格&库存,您可以联系我们找货
免费人工找货